Self-assembly of laterally aligned GaAs quantum dot pairs

Simple item page
dc.creatorYamagiwa, M.
dc.creatorMano, T.
dc.creatorKuroda, T.
dc.creatorTateno, T.
dc.creatorSakoda, K.
dc.creatorKido, G.
dc.creatorKoguchi, N.
dc.creatorMinami, F.
dc.date2006-07-21
dc.date.accessioned2026-07-07T07:16:06Z
dc.date.available2026-07-07T07:16:06Z
dc.descriptionWe report the fabrication of self-assembled, strain-free GaAs/Al$_{0.27}$Ga$_{0.73}$As quantum dot pairs which are laterally aligned in the growth plane, utilizing the droplet epitaxy technique and the anisotropic surface potentials of the GaAs (100) surface for the migration of Ga adatoms. Photoluminescence spectra from a single quantum dot pair, consisting of a doublet, have been observed. Finite element energy level calculations of a model quantum dot pair are also presented.
dc.description4 pages, 3 figures, submitted to Appl. Phys. Lett
dc.identifierhttps://arxiv.org/abs/cond-mat/0607549
dc.identifierhttp://arxiv.org/abs/cond-mat/0607549
dc.identifierAppl. Phys. Lett. 89, 113115 (2006).
dc.identifierdoi:10.1063/1.2354007
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/113465
dc.subjectMaterials Science
dc.titleSelf-assembly of laterally aligned GaAs quantum dot pairs
dc.typetext

Files

Collections

arXiv