Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures

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dc.creatorHai, Pham Nam
dc.creatorSakata, Yusuke
dc.creatorYokoyama, Masafumi
dc.creatorOhya, Shinobu
dc.creatorTanaka, Masaaki
dc.date2007-08-13
dc.date.accessioned2026-07-07T09:46:46Z
dc.date.available2026-07-07T09:46:46Z
dc.descriptionWe demonstrate the spin valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAs nanoparticles in a GaAs matrix, and acts as a spin injector and a spin detector. Although the barrier height of the GaAs/MnAs interface was found to be very small, relatively large magnetoresistance was observed. This result shows that by using ballistic transport, we can realize a large spin valve effect without inserting a high tunnel barrier at the ferromagnetic metal / semiconductor interface.
dc.identifierhttps://arxiv.org/abs/0708.1681
dc.identifierhttp://arxiv.org/abs/0708.1681
dc.identifierPhys. Rev. B 77, 214435 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.214435
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/163641
dc.subjectMaterials Science
dc.titleSpin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures
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