Anomalous Hall Effect in SnMnEuTe and SnMnErTe mixed crystals

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dc.creatorRacka, K.
dc.creatorKuryliszyn, I.
dc.creatorArciszewska, M.
dc.creatorDobrowolski, W.
dc.creatorBroto, J. -M.
dc.creatorGoiran, M.
dc.creatorPortugall, O.
dc.creatorRakoto, H.
dc.creatorRaquet, B.
dc.creatorDugaev, V.
dc.creatorSlynko, E. I.
dc.creatorSlynko, V. E.
dc.date2002-07-15
dc.date.accessioned2026-07-07T02:46:16Z
dc.date.available2026-07-07T02:46:16Z
dc.descriptionThe Anomalous Hall Effect was investigated in IV-VI ferromagnetic semimagnetic semiconductors of Sn1-xMnxTe codoped with either Eu or Er. The analysis of experimental data: Hall resisitivity and magnetization showed that AHE coefficient RS depends on temperature, its value decreases with the temperature increase. We observe that above ferromagnet-paramagnet transition temperature RS changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of RS, particularly change of the sign.
dc.description2nd International Conference on Physics and Application of Spin Related Phenomena In Semiconductors, Wurzburg 23-26 July 2002, to be published in aspecial issue of the Journal of Superconductivity/Novel Magnetism
dc.identifierhttps://arxiv.org/abs/cond-mat/0207355
dc.identifierhttp://arxiv.org/abs/cond-mat/0207355
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/19603
dc.subjectMaterials Science
dc.titleAnomalous Hall Effect in SnMnEuTe and SnMnErTe mixed crystals
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