Characterisation of radiation damage in silicon photomultipliers with a Monte Carlo model

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dc.creatorMajos, S. Sanchez
dc.creatorAchenbach, P.
dc.creatorPochodzalla, J.
dc.date2008-05-27
dc.date.accessioned2026-07-07T11:51:09Z
dc.date.available2026-07-07T11:51:09Z
dc.descriptionMeasured response functions and low photon yield spectra of silicon photomultipliers (SiPM) were compared to multi-photoelectron pulse-height distributions generated by a Monte Carlo model. Characteristic parameters for SiPM were derived. The devices were irradiated with 14 MeV electrons at the Mainz microtron MAMI. It is shown that the first noticeable damage consists of an increase in the rate of dark pulses and the loss of uniformity in the pixel gains. Higher radiation doses reduced also the photon detection efficiency. The results are especially relevant for applications of SiPM in fibre detectors at high luminosity experiments.
dc.descriptionsubmitted to Nucl. Instr. and Meth. A
dc.identifierhttps://arxiv.org/abs/0805.4158
dc.identifierhttp://arxiv.org/abs/0805.4158
dc.identifierNucl.Instrum.Meth.A594:351-357,2008
dc.identifierdoi:10.1016/j.nima.2008.06.021
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/203801
dc.subjectNuclear Experiment
dc.titleCharacterisation of radiation damage in silicon photomultipliers with a Monte Carlo model
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