Theory of a Magnetically-Controlled Quantum-Dot Spin Transistor

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dc.creatorUrban, Daniel
dc.creatorBraun, Matthias
dc.creatorKönig, Jürgen
dc.date2007-05-04
dc.date2007-09-28
dc.date.accessioned2026-07-07T08:32:28Z
dc.date.available2026-07-07T08:32:28Z
dc.descriptionWe examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise non-magnetic quantum dot. This spin accumulation leads to magnetoresistance. A ferromagnetic but current-free base electrode influences the quantum-dot spin via incoherent spin-flip processes and coherent spin precession. As the dot spin determines the conductance of the device, this allows for a purely magnetic transistor-like operation. We analyze the effect of both types of processes on the electric current in different geometries.
dc.description7 pages, 6 figures
dc.identifierhttps://arxiv.org/abs/0705.0648
dc.identifierhttp://arxiv.org/abs/0705.0648
dc.identifierPhys. Rev. B 76, 125306 (2007)
dc.identifierdoi:10.1103/PhysRevB.76.125306
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/138805
dc.subjectMesoscale and Nanoscale Physics
dc.titleTheory of a Magnetically-Controlled Quantum-Dot Spin Transistor
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