Growth mechanisms of GaN on the O-terminated ZnO(000-1) surfaces

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dc.creatorFujiwara, Katsutoshi
dc.creatorIshii, Akira
dc.creatorEbisuzaki, Toshikazu
dc.creatorKobayashi, Atsushi
dc.creatorKawaguchi, Yuji
dc.creatorOhta, Jitsuo
dc.creatorFujioka, Hiroshi
dc.date2006-03-04
dc.date.accessioned2026-07-07T07:02:07Z
dc.date.available2026-07-07T07:02:07Z
dc.descriptionWe have investigated the stability of the 1ML-GaN on the O-polarity ZnO(000-1) interface structure using the first-principles calculation. We have found in our calculated results that the most stable structure for the 1ML-GaN on the O-polarity ZnO(000-1) interface has the N-polarity. However, we have found that the results of the adatom dynamics on the O-terminated ZnO(000-1) surface shows the Ga-polarity. We find that the key to change the polarity of GaN crystal grown on the O-terminated ZnO(000-1) surface is the growth temperature. We have suggested that the optimized initial growth condition for the growth of the Ga-polarity GaN crystal on the O-terminated ZnO(000-1) surface is under the suitable low temperature and the stoichiometric growth condition. Experimental observations show that GaN grown on ZnO(000-1) by PLD at substrate temperatures below 300C has Ga-polarity, which is quite consistent with the theoretical calculations
dc.descriptionAMS-LaTeX 2.0, 4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0603095
dc.identifierhttp://arxiv.org/abs/cond-mat/0603095
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/108496
dc.subjectMaterials Science
dc.titleGrowth mechanisms of GaN on the O-terminated ZnO(000-1) surfaces
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