Electric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes

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dc.creatorChen, Yung-Fu
dc.creatorFuhrer, M. S.
dc.date2005-10-07
dc.date.accessioned2026-07-07T08:47:18Z
dc.date.available2026-07-07T08:47:18Z
dc.descriptionCharge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25 micron-ampere, the reported current limit in metallic SWNTs due to optical phonon emission. Four simple models for the field-dependent velocity (ballistic, current saturation, velocity saturation, and constant mobility) are studied in the unipolar regime; the high-bias behavior is best explained by a velocity saturation model with a saturation velocity of 2 x 10^7 cm/s.
dc.descriptionto appear in Phys. Rev. Lett
dc.identifierhttps://arxiv.org/abs/cond-mat/0510158
dc.identifierhttp://arxiv.org/abs/cond-mat/0510158
dc.identifierPhys. Rev. Lett. 95, 236803 (2005)
dc.identifierdoi:10.1103/PhysRevLett.95.236803
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/143548
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectric Field-Dependent Charge-Carrier Velocity in Semiconducting Carbon Nanotubes
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