Gaped graphene bilayer: disorder and magnetic field effects

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dc.creatorCastro, Eduardo V.
dc.creatorPeres, N. M. R.
dc.creatorSantos, J. M. B. Lopes dos
dc.date2007-11-21
dc.date.accessioned2026-07-07T08:44:29Z
dc.date.available2026-07-07T08:44:29Z
dc.descriptionDouble layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene bilayer in the presence of disorder, perpendicular magnetic field, and transverse electric field. We show that the gap is rather stable in the presence of diagonal disorder. We compute the cyclotron effective mass in the semi-classical approximation, valid at low magnetic fields. Landau level formation is clearly seen in zigzag and armchair ribbons of the gaped bilayer at intermediate magnetic fields.
dc.description5 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0711.3479
dc.identifierhttp://arxiv.org/abs/0711.3479
dc.identifierphys. stat. sol. (b) 244, 2311 (2007)
dc.identifierdoi:10.1002/pssb.200674604
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/142670
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleGaped graphene bilayer: disorder and magnetic field effects
dc.typetext

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