Many Body Effects on the Transport Properties of Single-Molecule Devices

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dc.creatorCornaglia, P. S.
dc.creatorNess, H.
dc.creatorGrempel, D. R.
dc.date2004-03-23
dc.date2004-10-01
dc.date.accessioned2026-07-07T02:57:13Z
dc.date.available2026-07-07T02:57:13Z
dc.descriptionThe conductance through a molecular device including electron-electron and electron-phonon interactions is calculated using the Numerical Renormalization Group method. At low temperatures and weak electron-phonon coupling the properties of the conductance can be explained in terms of the standard Kondo model with renormalized parameters. At large electron-phonon coupling a charge analog of the Kondo effect takes place that can be mapped into an anisotropic Kondo model. In this regime the molecule is strongly polarized by a gate voltage which leads to rectification in the current-voltage characteristics of the molecular junction.
dc.description4 pages, 4 figures, minor changes, added references
dc.identifierhttps://arxiv.org/abs/cond-mat/0403578
dc.identifierhttp://arxiv.org/abs/cond-mat/0403578
dc.identifierPhys. Rev. Lett. 93, 147201 (2004)
dc.identifierdoi:10.1103/PhysRevLett.93.147201
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23580
dc.subjectStrongly Correlated Electrons
dc.subjectMesoscale and Nanoscale Physics
dc.titleMany Body Effects on the Transport Properties of Single-Molecule Devices
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