Hopping conduction in strongly insulating states of a diffusive bent quantum Hall junction

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dc.creatorSteinke, L.
dc.creatorSchuh, D.
dc.creatorBichler, M.
dc.creatorAbstreiter, G.
dc.creatorGrayson, M.
dc.date2008-02-29
dc.date2008-07-15
dc.date.accessioned2026-07-07T09:49:58Z
dc.date.available2026-07-07T09:49:58Z
dc.descriptionTransport studies of a bent quantum Hall junction at integer filling factors show strongly insulating states at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V, in order to classify the localization mechanisms responsible for the insulating state. The temperature dependence suggests a crossover from activated nearest-neighbor hopping at higher T to variable-range hopping conduction at lower T. The base temperature electric field dependence is consistent with 1D variable-range hopping conduction. We observe almost identical behavior at filling factors 1 and 2, and discuss how the bent quantum Hall junction conductance appears to be independent of the bulk spin state. Various models of 1D variable-range hopping which either include or ignore interactions are compared, all of which are consistent with the basic model of disorder coupled counter-propagating quantum Hall edges.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0802.4429
dc.identifierhttp://arxiv.org/abs/0802.4429
dc.identifierPhys. Rev. B 77, 235319 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.235319
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/164786
dc.subjectMesoscale and Nanoscale Physics
dc.titleHopping conduction in strongly insulating states of a diffusive bent quantum Hall junction
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