Electrical transport properties of polar heterointerface between KTaO3 and SrTiO3

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dc.creatorKalabukhov, A.
dc.creatorGunnarsson, R.
dc.creatorClaeson, T.
dc.creatorWinkler, D.
dc.date2007-04-09
dc.date.accessioned2026-07-07T07:55:43Z
dc.date.available2026-07-07T07:55:43Z
dc.descriptionElectrical transport of a polar heterointerface between two insulating perovskites, KTaO3 and SrTiO3, is studied. It is formed between a thin KTaO3 film deposited on a top of TiO2- terminated (100) SrTiO3 substrate. The resulting (KO)1-(TiO2)0 heterointerface is expected to be hole-doped according to formal valences of K (1+) and Ti (4+). We observed electrical conductivity and mobility in the KTaO3/SrTiO3 similar to values measured earlier in electron-doped LaAlO3/SrTiO3 heterointerfaces. However, the sign of the charge carriers in KTaO3/SrTiO3 obtained from the Hall measurements is negative. The result is an important clue to the true origin of the doping at perovskite oxide hetero-interfaces.
dc.description6 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0704.1050
dc.identifierhttp://arxiv.org/abs/0704.1050
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/127068
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleElectrical transport properties of polar heterointerface between KTaO3 and SrTiO3
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