Offsets and polarization at strained AlN/GaN polar interfaces

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dc.creatorBernardini, Fabio
dc.creatorFiorentin, Vincenzo
dc.creatorVanderbilt, David
dc.date1996-12-11
dc.date.accessioned2026-07-07T09:11:23Z
dc.date.available2026-07-07T09:11:23Z
dc.descriptionThe strain induced by lattice mismatch at the interface is responsible for the different value of the band discontinuities observed recently for the AlN/GaN (AlN on GaN) and the GaN/AlN (GaN on AlN) polar (0001) interface. We present a first-principles calculation of valence band offsets, interface dipoles, strain-induced piezoelectric fields, relaxed geometric structure, and formation energies. Our results confirm the existence of a large forward-backward asymmetry for this interface.
dc.description6 pages, 2 figures, MRS style (enclosed), to appear in MRS Proc. 448
dc.identifierhttps://arxiv.org/abs/cond-mat/9612107
dc.identifierhttp://arxiv.org/abs/cond-mat/9612107
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/151659
dc.subjectMaterials Science
dc.titleOffsets and polarization at strained AlN/GaN polar interfaces
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