Self-Consistent Theory of Metal Insulator Transitions in Disordered Systems

dc.creatorKuchinskii, E. Z.
dc.creatorSadovskii, M. V.
dc.creatorSuvorov, V. G.
dc.date1994-12-12
dc.date1994-12-13
dc.date.accessioned2026-07-07T08:58:52Z
dc.date.available2026-07-07T08:58:52Z
dc.descriptionSelf-consistent theory of electron localization in disordered systems is generalized for the case of interacting electrons. We propose and critically compare a number of possible self-consistency schemes which take into account the lowest perturbation theory contributions over the interaction. Depending on self-consistency scheme we can obtain either the continuous metal-insulator transition or that with the minimal metallic conductivity. Within the continuous transition approach we calculate the frequency dependence of generalized diffusion coefficient both for metallic and insulating phases. We also consider interaction renormalization of the single-electron density of states which demonstrates the growth of the effective pseudogap as system goes from metal to insulator.
dc.description24 pages, 8 figures, RevTeX 3.0, 4 uuencoded postscript figures replacing raw postscript
dc.identifierhttps://arxiv.org/abs/cond-mat/9412053
dc.identifierhttp://arxiv.org/abs/cond-mat/9412053
dc.identifierJETP 80 (1995) 1122
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/147494
dc.subjectCondensed Matter
dc.titleSelf-Consistent Theory of Metal Insulator Transitions in Disordered Systems
dc.typetext

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