Electric readout of magnetization dynamics in a ferromagnet-semiconductor system

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dc.creatorCywinski, L.
dc.creatorDery, H.
dc.creatorSham, L. J.
dc.date2006-01-28
dc.date2006-09-07
dc.date.accessioned2026-07-07T09:21:47Z
dc.date.available2026-07-07T09:21:47Z
dc.descriptionWe apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third connected to a capacitor, affect the currents and voltages. In a steady state, the voltage on the capacitor is related to spin accumulation in the channel. When the magnetization of one of the terminals is rotated, a transient current is triggered. This effect can be used for electrical detection of magnetization reversal dynamics of an electrode or for dynamical readout of the alignment of two magnetic contacts.
dc.descriptionRevised version, 8 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0601642
dc.identifierhttp://arxiv.org/abs/cond-mat/0601642
dc.identifierAppl. Phys. Lett. 89, 042105 (2006)
dc.identifierdoi:10.1063/1.2235881
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/155147
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleElectric readout of magnetization dynamics in a ferromagnet-semiconductor system
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