Insulator to semi-metal transition in graphene oxide

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dc.creatorEda, Goki
dc.creatorMattevi, Cecilia
dc.creatorYamaguchi, Hisato
dc.creatorKim, HoKwon
dc.creatorChhowalla, Manish
dc.date2009-05-18
dc.date.accessioned2026-07-07T13:15:58Z
dc.date.available2026-07-07T13:15:58Z
dc.descriptionTransport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent transport gap ranges from 10 ~ 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to increased number of available hopping sites.
dc.description9 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0905.2799
dc.identifierhttp://arxiv.org/abs/0905.2799
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/230642
dc.subjectMaterials Science
dc.titleInsulator to semi-metal transition in graphene oxide
dc.typetext

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