Triplet-singlet relaxation in semiconductor single and double quantum dots

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dc.creatorShen, K.
dc.creatorWu, M. W.
dc.date2007-08-20
dc.date2007-11-27
dc.date.accessioned2026-07-07T08:49:25Z
dc.date.available2026-07-07T08:49:25Z
dc.descriptionWe study the triplet-singlet relaxation in two-electron semiconductor quantum dots. Both single dots and vertically coupled double dots are discussed. In our work, the electron-electron Coulomb interaction, which plays an important role in the electronic structure, is included. The spin mixing is caused by spin-orbit coupling which is the key to the triplet-singlet relaxation. We show that the selection rule widely used in the literature is incorrect unless near the crossing/anticrossing point in single quantum dots. The triplet/singlet relaxation in double quantum dots can be markedly changed by varying barrier height, inter-dot distance, external magnetic field and dot size.
dc.description7 pages, 4 figures, PRB in press
dc.identifierhttps://arxiv.org/abs/0708.2592
dc.identifierhttp://arxiv.org/abs/0708.2592
dc.identifierPhys. Rev. B 76, 235313 (2007).
dc.identifierdoi:10.1103/PhysRevB.76.235313
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/144291
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleTriplet-singlet relaxation in semiconductor single and double quantum dots
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