Magnetic properties of HO2 thin films

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dc.creatorHadacek, Nicolas
dc.creatorNossov, Alexandre
dc.creatorRanno, Laurent
dc.creatorStrobel, Pierre
dc.creatorGaléra, Rose-Marie
dc.date2007-12-14
dc.date.accessioned2026-07-07T08:49:21Z
dc.date.available2026-07-07T08:49:21Z
dc.descriptionWe report on the magnetic and transport studies of hafnium oxide thin films grown by pulsed-laser deposition on sapphire substrates under different oxygen pressures, ranging from 10-7 to 10-1 mbar. Some physical properties of these thin films appear to depend on the oxygen pressure during growth: the film grown at low oxygen pressure (P ~= 10-7 mbar) has a metallic aspect and is conducting, with a positive Hall signal, while those grown under higher oxygen pressures (7 x 10-5 <= P <= 0.4 mbar) are insulating. However, no intrinsic ferromagnetic signal could be attributed to the HfO2 films, irrespective of the oxygen pressure during the deposition.
dc.description12
dc.identifierhttps://arxiv.org/abs/0712.2410
dc.identifierhttp://arxiv.org/abs/0712.2410
dc.identifierJournal of Physics Condensed Matter 19, 48 (2007) 486206
dc.identifierdoi:10.1088/0953-8984/19/48/486206
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/144265
dc.subjectStrongly Correlated Electrons
dc.titleMagnetic properties of HO2 thin films
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