Nanolithography by non-contact AFM induced local oxidation : Fabrication of tunneling barriers suitable for single electron devices

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dc.creatorIrmer, B.
dc.creatorKehrle, M.
dc.creatorLorenz, H.
dc.creatorKotthaus, J. P.
dc.date1998-05-27
dc.date.accessioned2026-07-07T03:10:40Z
dc.date.available2026-07-07T03:10:40Z
dc.descriptionWe study local oxidation induced by dynamic atomic force microscopy (AFM), commonly called TappingMode AFM. This minimizes the field induced forces, which cause the tip to blunt, and enables us to use very fine tips. We are able to fabricate Ti/TiOx line grids with 18 nm period and well defined isolating barriers as small as 15 nm. These junctions show a non-linear current-voltage characteristic and an exponential dependence of the conductance on the oxide width, indicating tunneling as the dominant conduction mechanism. From the conductance - barrier width dependence we derive a barrier height of 178 meV. Numerical calculations of the lateral field distribution for different tip geometries allow to design the optimum tip for the most localised electric field. The electron-beam-deposition (EBD) technique makes it possible to actually produce tips of the desired geometry.
dc.identifierhttps://arxiv.org/abs/cond-mat/9805350
dc.identifierhttp://arxiv.org/abs/cond-mat/9805350
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/28300
dc.subjectMesoscale and Nanoscale Physics
dc.titleNanolithography by non-contact AFM induced local oxidation : Fabrication of tunneling barriers suitable for single electron devices
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