Complete spin polarization of degenerate electrons in semiconductors near ferromagnetic contacts

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dc.creatorPetukhov, A. G.
dc.creatorSmelyanskiy, V. N.
dc.creatorOsipov, V. V.
dc.date2006-09-22
dc.date.accessioned2026-07-07T07:23:40Z
dc.date.available2026-07-07T07:23:40Z
dc.descriptionWe show that spin polarization of electron density in nonmagnetic degenerate semiconductors can achieve 100%. This effect is realized in ferromagnet-semiconductor $FM-n^{+}$-$n$ junctions even at moderate spin selectivity of the $FM-n^{+}$ contact when the electrons are extracted from the heavily doped $n^{+}-$semiconductor into the ferromagnet. We derived a general equation relating spin polarization of the current to that of the electron density in nonmagnetic semiconductors. We found that the effect of the complete spin polarization is achieved near $n^{+}$-$n$ interface when an effective diffusion coefficient goes to zero in this region while the diffusion current remains finite.
dc.identifierhttps://arxiv.org/abs/cond-mat/0609599
dc.identifierhttp://arxiv.org/abs/cond-mat/0609599
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/116069
dc.subjectOther Condensed Matter
dc.titleComplete spin polarization of degenerate electrons in semiconductors near ferromagnetic contacts
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