Split-off dimer defects on the Si(001)2x1 surface

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dc.creatorSchofield, S. R.
dc.creatorMarks, N. A.
dc.creatorCurson, N. J.
dc.creatorO'Brien, J. L.
dc.creatorBrown, G. W.
dc.creatorSimmons, M. Y.
dc.creatorClark, R. G.
dc.creatorHawley, M. E.
dc.creatorWilson, H. F.
dc.date2003-05-05
dc.date.accessioned2026-07-07T06:26:20Z
dc.date.available2026-07-07T06:26:20Z
dc.descriptionDimer vacancy (DV) defect complexes in the Si(001)2x1 surface were investigated using high-resolution scanning tunneling microscopy and first principles calculations. We find that under low bias filled-state tunneling conditions, isolated 'split-off' dimers in these defect complexes are imaged as pairs of protrusions while the surrounding Si surface dimers appear as the usual 'bean-shaped' protrusions. We attribute this to the formation of pi-bonds between the two atoms of the split-off dimer and second layer atoms, and present charge density plots to support this assignment. We observe a local brightness enhancement due to strain for different DV complexes and provide the first experimental confirmation of an earlier prediction that the 1+2-DV induces less surface strain than other DV complexes. Finally, we present a previously unreported triangular shaped split-off dimer defect complex that exists at SB-type step edges, and propose a structure for this defect involving a bound Si monomer.
dc.description8 pages, 7 figures, submitted to Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/cond-mat/0305065
dc.identifierhttp://arxiv.org/abs/cond-mat/0305065
dc.identifierPhys. Rev. B 69, 085312 (2004)
dc.identifierdoi:10.1103/PhysRevB.69.085312
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/97077
dc.subjectMaterials Science
dc.titleSplit-off dimer defects on the Si(001)2x1 surface
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