Origin and Perspectives of High Mobility in LaAlO3/SrTiO3 Structures

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dc.creatorHerranz, G.
dc.creatorBasletic, M.
dc.creatorBibes, M.
dc.creatorCarretero, C.
dc.creatorTafra, E.
dc.creatorJacquet, E.
dc.creatorBouzehouane, K.
dc.creatorDeranlot, C.
dc.creatorMaurice, J. -L.
dc.creatorHamzic, A.
dc.creatorContour, J. -P.
dc.creatorBarthelemy, A.
dc.creatorFert, A.
dc.date2006-06-07
dc.date.accessioned2026-07-07T07:12:30Z
dc.date.available2026-07-07T07:12:30Z
dc.descriptionLaAlO3/SrTiO3 structures showing high mobility conduction have recently aroused large expectations as they might represent a major step towards the conception of all-oxide electronics devices. For the development of these technological applications a full understanding of the dimensionality and origin of the conducting electronic system is crucial. To shed light on this issue, we have investigated the magnetotransport properties of a LaAlO3 layer epitaxially grown at low oxygen pressure on a TiO2-terminated (001)-SrTiO3 substrate. In agreement with recent reports, a low-temperature mobility of about 10^4 cm2/Vs has been found. We conclusively show that the electronic system is three-dimensional, excluding any interfacial confinement of carriers. We argue that the high-mobility conduction originates from the doping of SrTiO3 with oxygen vacancies and that it extends over hundreds of microns into the SrTiO3 substrate. Such high mobility SrTiO3-based heterostructures have a unique potential for electronic and spintronics devices.
dc.description17 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0606182
dc.identifierhttp://arxiv.org/abs/cond-mat/0606182
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/112098
dc.subjectMaterials Science
dc.titleOrigin and Perspectives of High Mobility in LaAlO3/SrTiO3 Structures
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