Thermopower in p-type GaAs/AlGaAs layers

Simple item page
dc.creatorTsaousidou, M.
dc.creatorButcher, P. N.
dc.creatorCrump, P. A.
dc.creatorHyndman, R. J.
dc.creatorGallagher, B. L.
dc.date2000-04-17
dc.date.accessioned2026-07-07T02:37:23Z
dc.date.available2026-07-07T02:37:23Z
dc.descriptionWe explain for the first time thermopower data for p-type GaAs/AlGaAs layers. The data span a temperature range between 0.2 to 1.2K. We calculate both the diffusion $S^{d}$ and the phonon-drag $S^{g}$ contributions to the thermopower. We find that $S^{d}$ is significant for temperatures up to 0.3K while at higher temperatures $S^{g}$ dominates. The calculated and measured $S^{g}$ agree very well with no adjustable parameters.
dc.descriptionRevTex, 7 pages (included 2 eps figures). Proceedings of the 24th International Conference on the Physics of Semiconductors, ICPS24 Jerusalem August 1998
dc.identifierhttps://arxiv.org/abs/cond-mat/0004274
dc.identifierhttp://arxiv.org/abs/cond-mat/0004274
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16270
dc.subjectCondensed Matter
dc.titleThermopower in p-type GaAs/AlGaAs layers
dc.typetext

Files

Collections

arXiv