"Scaling of an anomalous metal/insulator transition in a 2D system in silicon at zero magnetic field"

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dc.creatorKravchenko, S. V.
dc.creatorMason, Whitney E.
dc.creatorBowker, G. E.
dc.creatorFurneaux, J. E.
dc.creatorPudalov, V. M.
dc.creatorD'Iorio, M.
dc.date1994-12-22
dc.date.accessioned2026-07-07T03:07:36Z
dc.date.available2026-07-07T03:07:36Z
dc.descriptionWe have studied the temperature dependence of resistivity, $ρ$, for a two-dimensional electron system in silicon at low electron densities, $n_s\sim10^{11}$ cm$^{-2}$, near the metal/insulator transition. The resistivity was empirically found to scale with a single parameter, $T_0$, which approaches zero at some critical electron density, $n_c$, and increases as a power $T_0\propto|n_s-n_c|^β$ with $β=1.6\pm0.1$ both in metallic ($n_s>n_c$) and insulating ($n_s<n_c$) regions. This dependence was found to be sample-independent. We have also studied the diagonal resistivity at Landau level filling factor $ν=3/2$ where the system is known to be in a metallic state at high magnetic field and in an insulating state at low magnetic field. The temperature dependencies of resistivity at $B=0$ and at $ν=3/2$ were found to be identical. These behaviors suggest a true metal/insulator transition in the two dimensional electron system in silicon at $B=0$, in contrast with the well-known scaling theory.
dc.descriptionuuencoded compressed ps-file. To be published in PRB
dc.identifierhttps://arxiv.org/abs/cond-mat/9412103
dc.identifierhttp://arxiv.org/abs/cond-mat/9412103
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27227
dc.subjectCondensed Matter
dc.title"Scaling of an anomalous metal/insulator transition in a 2D system in silicon at zero magnetic field"
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