Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors

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dc.creatorStone, Peter R.
dc.creatorBeeman, Jeffrey W.
dc.creatorYu, Kin M.
dc.creatorDubon, Oscar D.
dc.date2007-07-30
dc.date.accessioned2026-07-07T10:17:18Z
dc.date.available2026-07-07T10:17:18Z
dc.descriptionWe have synthesized Ga1-xMnxAs1-yPy and Ga1-xMnxP1-yNy by the combination of ion implantation and pulsed-laser melting. We find that the incorporation of isovalent impurities with smaller atomic radii leads to a realignment of the magnetic easy axis in Ga1-xMnxP1-yNy/GaP and Ga1-xMnxAs1-yPy/GaAs thin films from in-plane to out-of-plane. This tensile-strain-induced magnetic anisotropy is reminiscent of that observed in Ga1-xMnxAs grown on larger lattice constant (In,Ga)As buffer layers indicating that the role of strain in determining magnetic anisotropy is fundamental to III-Mn-V materials. In addition, we observe a decrease in the ferromagnetic Curie temperature in Ga1-xMnxAs1-yPy with increasing y from 0 to 0.028. Such a decrease may result from localization of holes as the P/As ratio on the Group V sublattice increases.
dc.description14 pages, 4 figures. Accepted for publication in the Proceedings of the 24th International Conference on Defects in Semiconductors, which will be released in the journal Physica B: Condensed Matter
dc.identifierhttps://arxiv.org/abs/0707.4490
dc.identifierhttp://arxiv.org/abs/0707.4490
dc.identifierPhysica B 401-402, 454 (2007)
dc.identifierdoi:10.1016/j.physb.2007.08.210
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/173807
dc.subjectMaterials Science
dc.titleTuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors
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