Quantum corrections to conductivity: from weak to strong localization
| dc.creator | Minkov, G. M. | |
| dc.creator | Rut, O. E. | |
| dc.creator | Germanenko, A. V. | |
| dc.creator | Sherstobitov, A. A. | |
| dc.creator | Zvonkov, B. N. | |
| dc.creator | Uskova, E. A. | |
| dc.creator | Birukov, A. A. | |
| dc.date | 2001-11-28 | |
| dc.date | 2001-11-30 | |
| dc.date.accessioned | 2026-07-07T12:08:19Z | |
| dc.date.available | 2026-07-07T12:08:19Z | |
| dc.description | Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the conductivity is diffusive for $k_F l=25-2$ and behaves like diffusive one for $k_F l=2-0.5$ down to the temperature T=0.4 K. It has been therewith found that the quantum corrections are not small at low temperature when $k_F l\simeq 1$. They are close in magnitude to the Drude conductivity so that the conductivity $σ$ becomes significantly less than $e^{2}/h$ (the minimal $σ$ value achieved in our experiment is about $3\times 10^{-8}Ω^{-1}$ at $k_Fl\simeq 0.5$ and $T=0.46$ K). We conclude that the temperature and magnetic field dependences of conductivity in whole $k_Fl$ range are due to changes of quantum corrections. | |
| dc.description | RevTex 4.0, 10 figures, 7 two-column pages | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0111525 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0111525 | |
| dc.identifier | Phys. Rev. B 65, 235322 (2002) | |
| dc.identifier | doi:10.1103/PhysRevB.65.235322 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/209278 | |
| dc.subject | Disordered Systems and Neural Networks | |
| dc.title | Quantum corrections to conductivity: from weak to strong localization | |
| dc.type | text |