Robust strongly-modulated transmission of a $T$-shaped structure with local Rashba interaction

dc.creatorShen, K.
dc.creatorWu, M. W.
dc.date2008-02-18
dc.date2008-04-16
dc.date.accessioned2026-07-07T09:37:11Z
dc.date.available2026-07-07T09:37:11Z
dc.descriptionWe propose a scheme of spin transistor using a $T$-shaped structure with local Rashba interaction. A wide antiresonance energy gap appears due to the interplay of two types of interference, the Fano-Rashba interference and the structure interference. A large current from the gap area can be obtained via changing the Rashba strength and/or the length of the sidearm by using gate voltage. The robustness of the antiresonance gap against strong disorder is demonstrated and shows the feasibility of this structure for the real application.
dc.description4 pages, 3 figures, To be published in PRB
dc.identifierhttps://arxiv.org/abs/0802.2397
dc.identifierhttp://arxiv.org/abs/0802.2397
dc.identifierPhys. Rev. B 77, 193305 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.193305
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/160371
dc.subjectMesoscale and Nanoscale Physics
dc.titleRobust strongly-modulated transmission of a $T$-shaped structure with local Rashba interaction
dc.typetext

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