Bond-bending modes and stability of tetrahedral semiconductors under high pressure: a puzzle of AlN

Simple item page
dc.creatorIakovenko, E. V.
dc.creatorGauthier, M.
dc.creatorPolian, A.
dc.date2003-01-05
dc.date.accessioned2026-07-07T02:49:02Z
dc.date.available2026-07-07T02:49:02Z
dc.descriptionLattice vibrations of the wurtzite-type AlN have been studied by Raman spectroscopy under high pressure up to the structural phase transition at 20 GPa. We have shown that the widely debated bond-bending E_2^1 mode of w-AlN has an abnormal positive pressure shift up to the threshold of the phase transition, whereas in many tetrahedral semiconductors the bond-bending modes soften on compression. This finding disagrees with the results of ab initio calculations, which give a "normal" negative pressure shift. Combination of high dynamical and low thermodynamical stability of AlN breaks the correlation between the mode Gruneisen parameters for the bond-bending modes and the transition pressure, which holds for CdS, InP, ZnO, ZnTe, ZnSe, ZnS, Ge, Si, GaP, GaN, SiC and BeO.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0301045
dc.identifierhttp://arxiv.org/abs/cond-mat/0301045
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20638
dc.subjectMaterials Science
dc.titleBond-bending modes and stability of tetrahedral semiconductors under high pressure: a puzzle of AlN
dc.typetext

Files

Collections

arXiv