Band bending and quasi-2DEG in the metallized $β$-SiC(001) surface
| dc.creator | Rurali, R. | |
| dc.creator | Wachowicz, E. | |
| dc.creator | Hyldgaard, P. | |
| dc.creator | Ordejón, P. | |
| dc.date | 2008-09-03 | |
| dc.date.accessioned | 2026-07-07T10:00:18Z | |
| dc.date.available | 2026-07-07T10:00:18Z | |
| dc.description | We study the mechanism leading to the metallization of the $β$-SiC(001) Si-rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi-2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first-principles calculations, and uncovers the basic physics of the process. | |
| dc.description | accepted for publication in physica status solidi - Rapid Research Letters | |
| dc.identifier | https://arxiv.org/abs/0809.0578 | |
| dc.identifier | http://arxiv.org/abs/0809.0578 | |
| dc.identifier | doi:10.1002/pssr.200802166 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/168290 | |
| dc.subject | Materials Science | |
| dc.title | Band bending and quasi-2DEG in the metallized $β$-SiC(001) surface | |
| dc.type | text |