Current Noise in Quantum Point Contacts

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dc.creatorDiCarlo, L.
dc.creatorZhang, Yiming
dc.creatorMcClure, D. T.
dc.creatorReilly, D. J.
dc.creatorMarcus, C. M.
dc.creatorPfeiffer, L. N.
dc.creatorWest, K. W.
dc.creatorHanson, M. P.
dc.creatorGossard, A. C.
dc.date2007-04-30
dc.date.accessioned2026-07-07T07:58:44Z
dc.date.available2026-07-07T07:58:44Z
dc.descriptionWe present measurements of current noise in quantum point contacts as a function of source-drain bias, gate voltage, and in-plane magnetic field. At zero bias, Johnson noise provides a measure of the electron temperature. At finite bias, shot noise at zero field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields quantitative agreement. Additionally, a device-specific contribution to the finite-bias noise, particularly visible on conductance plateaus (where shot noise vanishes), agrees quantitatively with a model of bias-dependent electron heating.
dc.descriptionProceedings of the 6th Rencontres du Vietnam, Hanoi (2006)
dc.identifierhttps://arxiv.org/abs/0704.3892
dc.identifierhttp://arxiv.org/abs/0704.3892
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/128116
dc.subjectMesoscale and Nanoscale Physics
dc.titleCurrent Noise in Quantum Point Contacts
dc.typetext

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