Ferromagnetic-like closure domains in ferroelectric ultrathin films
| dc.creator | Aguado-Puente, Pablo | |
| dc.creator | Junquera, Javier | |
| dc.date | 2007-10-08 | |
| dc.date.accessioned | 2026-07-07T08:34:44Z | |
| dc.date.available | 2026-07-07T08:34:44Z | |
| dc.description | We simulate from first-principles the energetic, structural, and electronic properties of ferroelectric domains in ultrathin capacitors made of a few unit cells of BaTiO$_3$ between two metallic SrRuO$_3$ electrodes in short circuit. The domains are stabilized down to two unit cells, adopting the form of a domain of closure, common in ferromagnets but only recently detected experimentally in ferroelectric thin films. The domains are closed by the in-plane relaxation of the atoms in the first SrO layer of the electrode, that behaves more like SrO in highly polarizable SrTiO$_3$ than in metallic SrRuO$_3$. Even if small, these lateral displacements are essential to stabilize the domains, and might provide some hints to explain why some systems break into domains while others remain in a monodomain configuration. An analysis of the electrostatic potential reveals preferential points of pinning for charged defects at the ferroelectric-electrode interface, possibly playing a major role in films fatigue. | |
| dc.description | 4 pages and 4 eps figures | |
| dc.identifier | https://arxiv.org/abs/0710.1515 | |
| dc.identifier | http://arxiv.org/abs/0710.1515 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/139539 | |
| dc.subject | Materials Science | |
| dc.title | Ferromagnetic-like closure domains in ferroelectric ultrathin films | |
| dc.type | text |