Lindhard Factors and Concentrations of Primary Defects in Semiconductor Materials for uses in HEP

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dc.creatorLazanu, I.
dc.creatorLazanu, S.
dc.date2003-01-13
dc.date.accessioned2026-07-07T03:49:01Z
dc.date.available2026-07-07T03:49:01Z
dc.descriptionThis report is a compilation of authors' calculations of the Lindhard factors, and of the concentration of primary radiation defects per unit particle fluence in different materials for HEP uses.
dc.description8 pages
dc.identifierhttps://arxiv.org/abs/hep-ph/0301080
dc.identifierhttp://arxiv.org/abs/hep-ph/0301080
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/42243
dc.subjectHigh Energy Physics - Phenomenology
dc.titleLindhard Factors and Concentrations of Primary Defects in Semiconductor Materials for uses in HEP
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