Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers

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dc.creatorEmtsev, Konstantin V.
dc.creatorBostwick, Aaron
dc.creatorHorn, Karsten
dc.creatorJobst, Johannes
dc.creatorKellogg, Gary L.
dc.creatorLey, Lothar
dc.creatorMcChesney, Jessica L.
dc.creatorOhta, Taisuke
dc.creatorReshanov, Sergey A.
dc.creatorRotenberg, Eli
dc.creatorSchmid, Andreas K.
dc.creatorWaldmann, Daniel
dc.creatorWeber, Heiko B.
dc.creatorSeyller, Thomas
dc.date2008-08-08
dc.date.accessioned2026-07-07T09:55:42Z
dc.date.available2026-07-07T09:55:42Z
dc.descriptionWe have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm^2/Vs at room temperature and 2000 cm^2/Vs at 27K. The growth process introduced here establishes the synthesis of graphene films on a technologically viable basis.
dc.identifierhttps://arxiv.org/abs/0808.1222
dc.identifierhttp://arxiv.org/abs/0808.1222
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/166720
dc.subjectMaterials Science
dc.titleAtmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers
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