Quantum shape effects on Zeeman splittings in semiconductor nanostructures

dc.creatorChen, Pochung
dc.date2005-03-02
dc.date.accessioned2026-07-07T07:59:10Z
dc.date.available2026-07-07T07:59:10Z
dc.descriptionWe develop a general method to calculate Zeeman splittings of electrons and holes in semiconductor nanostructures within the tight-binding framework. The calculation is carried out in the electron-hole picture and is extensible to the excitonic calculation by including the electron-hole Coulomb interaction. The method is suitable for the investigation of quantum shape effects and the anisotropy of the g-factors. Numerical results for CdSe and CdTe nanostructures are presented.
dc.identifierhttps://arxiv.org/abs/cond-mat/0503042
dc.identifierhttp://arxiv.org/abs/cond-mat/0503042
dc.identifierPhys. Rev. B 72, 045335 (2005)
dc.identifierdoi:10.1103/PhysRevB.72.045335
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/128271
dc.subjectOther Condensed Matter
dc.titleQuantum shape effects on Zeeman splittings in semiconductor nanostructures
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