First principles investigation of transition-metal doped group-IV semiconductors: R${_x}$Y$_{1-x}$ (R=Cr, Mn, Fe; Y=Si, Ge)
| dc.creator | Weng, Hongming | |
| dc.creator | Dong, Jinming | |
| dc.date | 2006-03-29 | |
| dc.date.accessioned | 2026-07-07T07:05:03Z | |
| dc.date.available | 2026-07-07T07:05:03Z | |
| dc.description | A number of transition-metal (TM) doped group-IV semiconductors, R$_{x}$Y$_{1-x}$ (R=Cr, Mn and Fe; Y=Si, Ge), have been studied by the first principles calculations. The obtained results show that antiferromagnetic (AFM) order is energetically more favored than ferromagnetic (FM) order in Cr-doped Ge and Si with $x$=0.03125 and 0.0625. In 6.25% Fe-doped Ge, FM interaction dominates in all range of the R-R distances while for Fe-doped Ge at 3.125% and Fe-doped Si at both concentrations of 3.125% and 6.25%, only in a short R-R range can the FM states exist. In the Mn-doped case, the RKKY-like mechanism seems to be suitable for the Ge host matrix, while for the Mn-doped Si, the short-range AFM interaction competes with the long-range FM interaction. The different origin of the magnetic orders in these diluted magnetic semiconductors (DMSs) makes the microscopic mechanism of the ferromagnetism in the DMSs more complex and attractive. | |
| dc.description | 14 pages, 2 figures, 6 tables | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0603782 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0603782 | |
| dc.identifier | PHYSICAL REVIEW B 71, 035201 (2005) | |
| dc.identifier | doi:10.1103/PhysRevB.71.035201 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/109546 | |
| dc.subject | Materials Science | |
| dc.title | First principles investigation of transition-metal doped group-IV semiconductors: R${_x}$Y$_{1-x}$ (R=Cr, Mn, Fe; Y=Si, Ge) | |
| dc.type | text |