Superconductivity, critical current density, and flux pinning in MgB_{2-x}(SiC)_{x/2} superconductor after SiC nanoparticle doping

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dc.creatorDou, S. X.
dc.creatorPan, A. V.
dc.creatorZhou, S.
dc.creatorIonescu, M.
dc.creatorWang, X. L.
dc.creatorHorvat, J.
dc.creatorLiu, H. K.
dc.creatorMunroe, P. R.
dc.date2002-07-03
dc.date2002-07-04
dc.date.accessioned2026-07-07T02:46:05Z
dc.date.available2026-07-07T02:46:05Z
dc.descriptionWe investigated the effect of SiC nano-particle doping on the crystal lattice structure, critical temperature T_c, critical current density J_c, and flux pinning in MgB_2 superconductor. A series of MgB_{2-x}(SiC)_{x/2} samples with x = 0 to 1.0 were fabricated using in-situ reaction process. The contraction of the lattice and depression of T_c with increasing SiC doping level remained rather small due to the counter-balanced effect of Si and C co-doping. The high level Si and C co-doping allowed the creation of intra-grain defects and highly dispersed nano-inclusions within the grains which can act as effective pinning centers for vortices, improving J_c behavior as a function of the applied magnetic field. The enhanced pinning is mainly attributable to the substitution-induced defects and a local structure fluctuations within grains. A pinning mechanism is proposed to account for different contributions of different defects in MgB_{2-x}(SiC)_{x/2} superconductors.
dc.description7 pages, 8 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0207093
dc.identifierhttp://arxiv.org/abs/cond-mat/0207093
dc.identifierJ. Appl. Phys. 94, 1850-1856 (2003)
dc.identifierdoi:10.1063/1.1586467
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/19538
dc.subjectSuperconductivity
dc.subjectMaterials Science
dc.titleSuperconductivity, critical current density, and flux pinning in MgB_{2-x}(SiC)_{x/2} superconductor after SiC nanoparticle doping
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