Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

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dc.creatorMorozov, S. V.
dc.creatorNovoselov, K. S.
dc.creatorKatsnelson, M. I.
dc.creatorSchedin, F.
dc.creatorElias, D. C.
dc.creatorJaszczak, J. A.
dc.creatorGeim, A. K.
dc.date2007-10-28
dc.date2008-01-07
dc.date.accessioned2026-07-07T08:52:31Z
dc.date.available2026-07-07T08:52:31Z
dc.descriptionWe have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements have shown that mobilities significantly higher than 200,000 cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (threshold-like) increase in resistivity observed above approximately 200K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intra-ripple flexural phonons.
dc.identifierhttps://arxiv.org/abs/0710.5304
dc.identifierhttp://arxiv.org/abs/0710.5304
dc.identifierPhys. Rev. Lett. 100, 016602 (2008)
dc.identifierdoi:10.1103/PhysRevLett.100.016602
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/145302
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleGiant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
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