Exchange effects on electron scattering through a quantum dot embedded in a two-dimensional semiconductor structure

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dc.creatorCastelano, L. K.
dc.creatorHai, G. -Q.
dc.creatorLee, M. -T.
dc.date2007-07-03
dc.date2007-11-19
dc.date.accessioned2026-07-07T08:43:16Z
dc.date.available2026-07-07T08:43:16Z
dc.descriptionWe have developed a theoretical method to study scattering processes of an incident electron through an N-electron quantum dot (QD) embedded in a two-dimensional (2D) semiconductor. The generalized Lippmann-Schwinger equations including the electron-electron exchange interaction in this system are solved for the continuum electron by using the method of continued fractions (MCF) combined with 2D partial-wave expansion technique. The method is applied to a one-electron QD case. Cross-sections are obtained for both the singlet and triplet couplings between the incident electron and the QD electron during the scattering. The total elastic cross-sections as well as the spin-flip scattering cross-sections resulting from the exchange potential are presented. Furthermore, inelastic scattering processes are also studied using a multichannel formalism of the MCF.
dc.description11 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0707.0398
dc.identifierhttp://arxiv.org/abs/0707.0398
dc.identifierPhys. Rev. B, 76, 165306 (2007)
dc.identifierdoi:10.1103/PhysRevB.76.165306
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/142256
dc.subjectOther Condensed Matter
dc.titleExchange effects on electron scattering through a quantum dot embedded in a two-dimensional semiconductor structure
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