Universal characteristics of resonant-tunneling field emission from nanostructured surfaces

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dc.creatorJohnson, S.
dc.creatorZuelicke, U.
dc.creatorMarkwitz, A.
dc.date2007-05-26
dc.date.accessioned2026-07-07T08:12:22Z
dc.date.available2026-07-07T08:12:22Z
dc.descriptionWe have performed theoretical and experimental studies of field emission from nanostructured semiconductor cathodes. Resonant tunneling through electric-field-induced interface bound states is found to strongly affect the field-emission characteristics. Our analytical theory predicts power-law and Lorentzian-shaped current-voltage curves for resonant-tunneling field emission from three-dimensional substrates and two-dimensional accumulation layers, respectively. These predicted line shapes are observed in field emission characteristics from self-assembled silicon nanostructures. A simple model describes formation of an accumulation layer and of the resonant level in these systems.
dc.description5 pages, 4 figures, RevTex, to appear in J. Appl. Phys
dc.identifierhttps://arxiv.org/abs/0705.3879
dc.identifierhttp://arxiv.org/abs/0705.3879
dc.identifierJ. Appl. Phys. 101, 123712 (2007)
dc.identifierdoi:10.1063/1.2749284
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/132430
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleUniversal characteristics of resonant-tunneling field emission from nanostructured surfaces
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