Ballistic Magnetoresitance over 4000% at Room Temperature in Ni-Ni Electrodeposited Nanocontacts

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dc.creatorWang, Hai
dc.creatorCheng, H.
dc.creatorGarcia, N.
dc.date2002-07-22
dc.date.accessioned2026-07-07T02:46:23Z
dc.date.available2026-07-07T02:46:23Z
dc.descriptionThis paper reports ballistic magnetoresistance values over 4000% measured in electrodeposited Ni-Ni nanocontacts with T geometry previously developed . Over the time, after several magnetic field cycles, the ballistic magnetoresistance relaxed to a 400%. While that the magnetoreistance of a contact could rise indefinitely; relaxtion and reproducibility are, however, the main issue. We find that the tip ending radius conforming the contacts appears not to play the main role.
dc.description7 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0207516
dc.identifierhttp://arxiv.org/abs/cond-mat/0207516
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/19650
dc.subjectCondensed Matter
dc.titleBallistic Magnetoresitance over 4000% at Room Temperature in Ni-Ni Electrodeposited Nanocontacts
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