Ultrasmall In(Ga)As Quantum Dots Grown on Strained GaxIn1-xP Layers

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dc.creatorRaz, T.
dc.creatorRitter, D.
dc.creatorBahir, G.
dc.creatorGershoni, D.
dc.date2002-10-27
dc.date.accessioned2026-07-07T02:47:55Z
dc.date.available2026-07-07T02:47:55Z
dc.descriptionInAs self-assembled quantum dots were grown on strained layers of GaxIn1-xP (0 < x < 0.3) on InP substrates. We show that the quantum dots have narrow vertical dimensions, ranging between 2 to 10 monolayers only. The dot layer photoluminescence spectrum is composed of distinct spectral peaks, resulting from the discrete distribution of the dot heights. The dot height distribution depends on the total amount of InAs deposited and on the Ga content of the strained GaxIn1-xP layer underneath. Our experimental results are corroborated by an 8 band k(dot)P model calculations. In particular, we identify and quantify the diffusion of Ga from the GaxIn1-xP layer into the quantum dots.
dc.description13 pages, including 3 figures and references list
dc.identifierhttps://arxiv.org/abs/cond-mat/0210594
dc.identifierhttp://arxiv.org/abs/cond-mat/0210594
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20194
dc.subjectCondensed Matter
dc.titleUltrasmall In(Ga)As Quantum Dots Grown on Strained GaxIn1-xP Layers
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