Electrical expression of spin accumulation in ferromagnet/semiconductor structures
| dc.creator | Cywinski, L. | |
| dc.creator | Dery, H. | |
| dc.creator | Dalal, P. | |
| dc.creator | Sham, L. J. | |
| dc.date | 2007-09-17 | |
| dc.date.accessioned | 2026-07-07T09:21:38Z | |
| dc.date.available | 2026-07-07T09:21:38Z | |
| dc.description | We treat the spin injection and extraction via a ferromagnetic metal/semiconductor Schottky barrier as a quantum scattering problem. This enables the theory to explain a number of phenomena involving spin-dependent current through the Schottky barrier, especially the counter-intuitive spin polarization direction in the semiconductor due to current extraction seen in recent experiments. A possible explanation of this phenomenon involves taking into account the spin-dependent inelastic scattering via the bound states in the interface region. The quantum-mechanical treatment of spin transport through the interface is coupled with the semiclassical description of transport in the adjoining media, in which we take into account the in-plane spin diffusion along the interface in the planar geometry used in experiments. The theory forms the basis of the calculation of spin-dependent current flow in multi-terminal systems, consisting of a semiconductor channel with many ferromagnetic contacts attached, in which the spin accumulation created by spin injection/extraction can be efficiently sensed by electrical means. A three-terminal system can be used as a magnetic memory cell with the bit of information encoded in the magnetization of one of the contacts. Using five terminals we construct a reprogrammable logic gate, in which the logic inputs and the functionality are encoded in magnetizations of the four terminals, while the current out of the fifth one gives a result of the operation. | |
| dc.description | A review to appear in Mod. Phys. Lett. B | |
| dc.identifier | https://arxiv.org/abs/0709.2707 | |
| dc.identifier | http://arxiv.org/abs/0709.2707 | |
| dc.identifier | Mod. Phys. Lett. B 21, 1509 (2007) | |
| dc.identifier | doi:10.1142/S021798490701395X | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/155094 | |
| dc.subject | Materials Science | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Electrical expression of spin accumulation in ferromagnet/semiconductor structures | |
| dc.type | text |