Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well

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dc.creatorArapov, Yu. G.
dc.creatorNeverov, V. N.
dc.creatorHarus, G. I.
dc.creatorShelushinina, N. G.
dc.creatorYakunin, M. V.
dc.creatorKuznetsov, O. A.
dc.creatorde Visser, A.
dc.creatorPonomarenko, L.
dc.date2004-04-15
dc.date.accessioned2026-07-07T02:57:38Z
dc.date.available2026-07-07T02:57:38Z
dc.descriptionFor a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g_perp >> g_par), reported is an observation of low-temperature transition from metallic (dR/dT > 0) to insulator (dR/dT < 0) behavior of resistivity R(T) induced by a perpendicular magnetic field B. The revealed positive magnetoresistance scales as a function of B/T. We attribute this finding to a suppression of the triplet channel of electron-electron (hole-hole) interaction due to Zeeman splitting in the hole spectrum.
dc.identifierhttps://arxiv.org/abs/cond-mat/0404355
dc.identifierhttp://arxiv.org/abs/cond-mat/0404355
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/23744
dc.subjectMesoscale and Nanoscale Physics
dc.titleEffect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well
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