A Temperature Analysis of High-power AlGaN/GaN HEMTs

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dc.creatorDas, J.
dc.creatorOprins, H.
dc.creatorJi, H.
dc.creatorSarua, A.
dc.creatorRuythooren, W.
dc.creatorDerluyn, J.
dc.creatorKuball, M.
dc.creatorGermain, M.
dc.creatorBorghs, G.
dc.date2007-09-12
dc.date.accessioned2026-07-07T08:29:08Z
dc.date.available2026-07-07T08:29:08Z
dc.descriptionGalliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN high electron mobility transistors (HEMT), an outstanding performance combined together with low cost and high flexibility can be obtained using a System-in-a-Package (SIP) approach. Since thermal management is extremely important for these high power applications, a hybrid integration of the HEMT onto an AlN carrier substrate is proposed. In this study we investigate the temperature performance for AlGaN/GaN HEMTs integrated onto AlN using flip-chip mounting. Therefore, we use thermal simulations in combination with experimental results using micro-Raman spectroscopy and electrical dc-analysis.
dc.descriptionSubmitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)
dc.identifierhttps://arxiv.org/abs/0709.1868
dc.identifierhttp://arxiv.org/abs/0709.1868
dc.identifierDans Proceedings of 12th International Workshop on Thermal investigations of ICs - THERMINIC 2006, Nice : France (2006)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/137861
dc.subjectMaterials Science
dc.titleA Temperature Analysis of High-power AlGaN/GaN HEMTs
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