Extrinsic levels, diffusion, and unusual incorporation mechanism of lithium in GaN
| dc.creator | Bernardini, Fabio | |
| dc.creator | Fiorentini, Vincenzo | |
| dc.date | 1999-08-03 | |
| dc.date.accessioned | 2026-07-07T03:14:07Z | |
| dc.date.available | 2026-07-07T03:14:07Z | |
| dc.description | Results of a first-principles study of the Li impurity in GaN are presented. We find Li is a channel interstitial, with an onset for diffusion at T$\sim$ 600 K. Above this temperature, Li can transform to a Ga-substitutional acceptor by exothermic recombination with Ga vacancies. This process implies capture of at least one electron; therefore Li acts as an electron sink. Li$_{\rm Ga}$ is stable again interstitialcy, and has a shallow first ionization levels of 0.16 eV, and second ionization at 0.63 eV. Lattice locations and their temperature dependence are in close agreement with recent experiments. | |
| dc.description | RevTeX 4 pages, embedded figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/9908038 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/9908038 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/29553 | |
| dc.subject | Materials Science | |
| dc.title | Extrinsic levels, diffusion, and unusual incorporation mechanism of lithium in GaN | |
| dc.type | text |