Interaction effects in the transport of two-dimensional holes in GaAs

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dc.creatorHuang, Jian
dc.creatorNovikov, D. S.
dc.creatorTsui, D. C.
dc.creatorPfeiffer, L. N.
dc.creatorWest, K. W.
dc.date2006-10-11
dc.date.accessioned2026-07-07T07:27:28Z
dc.date.available2026-07-07T07:27:28Z
dc.descriptionThe power-law increase of the conductivity with temperature in the nominally insulating regime, recently reported for the dilute two-dimensional holes [cond-mat/0603053], is found to systematically vary with the carrier density. Based on the results from four different GaAs heterojunction-insulated-gate field-effect-transistor samples, it is shown that the power law exponent depends on a single dimensionless parameter, the ratio between the mean carrier separation and the distance to the metallic gate that screens the Coulomb interaction. This dependence suggests that the carriers form a correlated state in which the interaction effects play a significant role in the transport properties.
dc.identifierhttps://arxiv.org/abs/cond-mat/0610320
dc.identifierhttp://arxiv.org/abs/cond-mat/0610320
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/117386
dc.subjectMesoscale and Nanoscale Physics
dc.subjectStrongly Correlated Electrons
dc.titleInteraction effects in the transport of two-dimensional holes in GaAs
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