Calculation of DOS-Dependent Channel Potentials in FETs in the Saturation Condition
| dc.creator | So, Woo-young | |
| dc.creator | Lang, David V. | |
| dc.creator | Ramirez, Arthur P. | |
| dc.date | 2007-09-20 | |
| dc.date.accessioned | 2026-07-07T08:31:20Z | |
| dc.date.available | 2026-07-07T08:31:20Z | |
| dc.description | We calculated functions for the potential, Vch, in the channel of a field effect transistor with various densities of the localized states (DOS) by using a device simulator. In the saturation condition, Vch is found to fit satisfactorily to the analytical function, Vch(y)=Vg(1-(1-y/L) k), where Vg is the gate bias, y is the position along the channel, and L is the channel length. The power k, which depends on the DOS, ranges from 0 to 0.5 even with an extensive variation of DOS. As a result, the total induced charge density in the saturation condition can be expressed a way similar to the linear condition by introducing a correction factor, alpha, ranging between 0.65 and 1.0. | |
| dc.description | 9 pages, 2 figures | |
| dc.identifier | https://arxiv.org/abs/0709.3298 | |
| dc.identifier | http://arxiv.org/abs/0709.3298 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/138474 | |
| dc.subject | Materials Science | |
| dc.title | Calculation of DOS-Dependent Channel Potentials in FETs in the Saturation Condition | |
| dc.type | text |