Sculpting the shape of semiconductor heteroepitaxial islands: from dots to rods

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dc.creatorRobinson, J. T.
dc.creatorWalko, D. A.
dc.creatorArms, D. A.
dc.creatorTinberg, D. S.
dc.creatorEvans, P. G.
dc.creatorCao, Y.
dc.creatorLiddle, J. A.
dc.creatorRastelli, A.
dc.creatorSchmidt, O. G.
dc.creatorDubon, O. D.
dc.date2007-02-01
dc.date.accessioned2026-07-07T07:44:11Z
dc.date.available2026-07-07T07:44:11Z
dc.descriptionIn the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal species and substrate orientation. Analysis of island faceting elucidates the prominent role of the metal in promoting growth of preferred facet orientations while investigations of island composition and structure reveal the importance of Si-Ge intermixing in island evolution. These effects reflect a remarkable combination of metal-mediated growth phenomena that may be exploited to tailor the functionality of island arrays in heteroepitaxial systems.
dc.descriptionaccepted- Physical Review Letters; 12 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0702003
dc.identifierhttp://arxiv.org/abs/cond-mat/0702003
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/123104
dc.subjectMaterials Science
dc.titleSculpting the shape of semiconductor heteroepitaxial islands: from dots to rods
dc.typetext

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