Nonvolatile memory with molecule-engineered tunneling barriers

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dc.creatorHou, Tuo-Hung
dc.creatorRaza, Hassan
dc.creatorAfshari, Kamran
dc.creatorRuebusch, Daniel J.
dc.creatorKan, Edwin C.
dc.date2008-03-28
dc.date.accessioned2026-07-07T09:32:52Z
dc.date.available2026-07-07T09:32:52Z
dc.descriptionWe report a novel field-sensitive tunneling barrier by embedding C60 in SiO2 for nonvolatile memory applications. C60 is a better choice than ultra-small nanocrystals due to its monodispersion. Moreover, C60 provides accessible energy levels to prompt resonant tunneling through SiO2 at high fields. However, this process is quenched at low fields due to HOMO-LUMO gap and large charging energy of C60. Furthermore, we demonstrate an improvement of more than an order of magnitude in retention to program/erase time ratio for a metal nanocrystal memory. This shows promise of engineering tunnel dielectrics by integrating molecules in the future hybrid molecular-silicon electronics.
dc.descriptionto appear in Applied Physics Letters
dc.identifierhttps://arxiv.org/abs/0803.4038
dc.identifierhttp://arxiv.org/abs/0803.4038
dc.identifierAppl. Phys. Lett. 92, 153109 (2008)
dc.identifierdoi:10.1063/1.2911741
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/158936
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleNonvolatile memory with molecule-engineered tunneling barriers
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