Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

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dc.creatorvan Beveren, L. H. Willems
dc.creatorHuebl, H.
dc.creatorMcCamey, D. R.
dc.creatorDuty, T.
dc.creatorFerguson, A. J.
dc.creatorClark, R. G.
dc.creatorBrandt, M. S.
dc.date2008-05-28
dc.date.accessioned2026-07-07T09:57:45Z
dc.date.available2026-07-07T09:57:45Z
dc.descriptionWe report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the fingerprint of spin-spin scattering in the two-dimensional electron gas.
dc.description4 pages, 4 figures, submitted to APL
dc.identifierhttps://arxiv.org/abs/0805.4244
dc.identifierhttp://arxiv.org/abs/0805.4244
dc.identifierAppl. Phys. Lett. 93, 072102 (2008)
dc.identifierdoi:10.1063/1.2960356
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/167464
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleBroadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
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