Self-shunted Al/AlOx/Al Josephson junctions

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dc.creatorLotkhov, S. V.
dc.creatorTolkacheva, E. M.
dc.creatorBalashov, D. V.
dc.creatorKhabipov, M. I.
dc.creatorBuchholz, F. -I.
dc.creatorZorin, A. B.
dc.date2006-05-22
dc.date.accessioned2026-07-07T07:09:05Z
dc.date.available2026-07-07T07:09:05Z
dc.descriptionSelf-shunted aluminum Josephson junctions with high-transparency barriers were fabricated using the shadow-evaporation technique and measured at low temperatures, T=25 mK. Due to high junction transparency, the IV-characteristics were found to be of only small hysteresis with retrapping-to-switching current ratio of up to 80%. The observed critical currents were close to the Ambegaokar-Baratoff values (up to 80-100%). Good barrier quality was confirmed by the low subgap leakage currents in the quasiparticle branches, which makes the self-shunted Al junctions promising for application in integrated RSFQ-qubit circuitry.
dc.description3 pages; 2 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0605532
dc.identifierhttp://arxiv.org/abs/cond-mat/0605532
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/110936
dc.subjectMesoscale and Nanoscale Physics
dc.subjectSuperconductivity
dc.titleSelf-shunted Al/AlOx/Al Josephson junctions
dc.typetext

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